GT8G131Manufacturer: TOS INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
GT8G131 | TOS | 5525 | In Stock |
Description and Introduction
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS The part GT8G131 is manufactured by Toshiba (TOS). It is a high-speed switching diode with the following specifications:
- **Type**: Switching Diode   These specifications are based on Toshiba's official datasheet for the GT8G131 diode. |
For immediate assistance, call us at +86 533 2716050 or email [email protected]
Specializes in hard-to-find components chips