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GT8G131 from TOS,TOSHIBA

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15.137ms

GT8G131

Manufacturer: TOS

INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS

Partnumber Manufacturer Quantity Availability
GT8G131 TOS 5525 In Stock

Description and Introduction

INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS The part GT8G131 is manufactured by Toshiba (TOS). It is a high-speed switching diode with the following specifications:

- **Type**: Switching Diode  
- **Maximum Reverse Voltage (VR)**: 70V  
- **Average Rectified Forward Current (IO)**: 150mA  
- **Peak Forward Surge Current (IFSM)**: 1A  
- **Forward Voltage (VF)**: 1V (at 10mA)  
- **Reverse Recovery Time (trr)**: 4ns  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: SOD-323 (SC-76)  

These specifications are based on Toshiba's official datasheet for the GT8G131 diode.

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