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GT60N321 from TOSHIBA

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GT60N321

Manufacturer: TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation

Partnumber Manufacturer Quantity Availability
GT60N321 TOSHIBA 10000 In Stock

Description and Introduction

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation The GT60N321 is a power MOSFET manufactured by Toshiba. Here are its key specifications:

- **Type**: N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS)**: 600V
- **Continuous Drain Current (ID)**: 60A (at 25°C)
- **Pulsed Drain Current (IDM)**: 240A
- **Power Dissipation (PD)**: 300W (at 25°C)
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 0.06Ω (max) at VGS = 10V
- **Input Capacitance (Ciss)**: 3000pF (typical)
- **Package**: TO-247

These specifications are based on standard operating conditions. For detailed performance curves or application-specific data, refer to the official Toshiba datasheet.

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