GT60N321Manufacturer: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
GT60N321 | TOSHIBA | 10000 | In Stock |
Description and Introduction
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation The GT60N321 is a power MOSFET manufactured by Toshiba. Here are its key specifications:
- **Type**: N-Channel Power MOSFET These specifications are based on standard operating conditions. For detailed performance curves or application-specific data, refer to the official Toshiba datasheet. |
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