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GT50J328 from TOSHIBA

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GT50J328

Manufacturer: TOSHIBA

Discrete IGBT

Partnumber Manufacturer Quantity Availability
GT50J328 TOSHIBA 450 In Stock

Description and Introduction

Discrete IGBT The GT50J328 is a power transistor manufactured by TOSHIBA. Here are its specifications:

- **Type**: N-channel MOS FET  
- **Maximum Drain-Source Voltage (VDSS)**: 500V  
- **Maximum Drain Current (ID)**: 50A  
- **Maximum Power Dissipation (PD)**: 230W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.08Ω (typical)  
- **Package**: TO-3P(N)  

These are the key specifications for the GT50J328 transistor from TOSHIBA.

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