GT30J301Manufacturer: TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
GT30J301 | TOSHIBA | 19 | In Stock |
Description and Introduction
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications The GT30J301 is a power transistor manufactured by TOSHIBA. Below are its key specifications:
1. **Type**: IGBT (Insulated Gate Bipolar Transistor)   These specifications are based on TOSHIBA's datasheet for the GT30J301. For detailed performance curves and application notes, refer to the official documentation. |
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