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GT30J301 from TOSHIBA

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GT30J301

Manufacturer: TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

Partnumber Manufacturer Quantity Availability
GT30J301 TOSHIBA 19 In Stock

Description and Introduction

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications The GT30J301 is a power transistor manufactured by TOSHIBA. Below are its key specifications:

1. **Type**: IGBT (Insulated Gate Bipolar Transistor)  
2. **Collector-Emitter Voltage (VCES)**: 600V  
3. **Collector Current (IC)**: 30A  
4. **Maximum Power Dissipation (PC)**: 200W  
5. **Gate-Emitter Voltage (VGE)**: ±20V  
6. **Operating Junction Temperature (Tj)**: -55°C to +150°C  
7. **Package**: TO-3P  

These specifications are based on TOSHIBA's datasheet for the GT30J301. For detailed performance curves and application notes, refer to the official documentation.

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