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GT25Q301 from TOSHIBA

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GT25Q301

Manufacturer: TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications

Partnumber Manufacturer Quantity Availability
GT25Q301 TOSHIBA 50 In Stock

Description and Introduction

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications The GT25Q301 is a flash memory device manufactured by Toshiba. Here are its key specifications:

1. **Memory Type**: Serial NOR Flash  
2. **Density**: 256 Mbit (32 MByte)  
3. **Interface**: SPI (Serial Peripheral Interface)  
4. **Operating Voltage**:  
   - 2.7V to 3.6V (Single Power Supply)  
5. **Speed**:  
   - Clock Frequency: Up to 133 MHz (Fast Read)  
6. **Sector Architecture**:  
   - Uniform 4 KB Sectors  
   - 256-byte Page Programming  
7. **Endurance**:  
   - 100,000 Program/Erase Cycles (Typical)  
8. **Data Retention**:  
   - 20 Years (Typical)  
9. **Package Options**:  
   - 8-pin SOP (150 mil)  
   - 8-pin USON  
10. **Operating Temperature Range**:  
    - Industrial: -40°C to +85°C  
    - Extended: -40°C to +105°C  

This information is based on Toshiba's official documentation for the GT25Q301.

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