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GT25Q102 from TOSHIBA

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GT25Q102

Manufacturer: TOSHIBA

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

Partnumber Manufacturer Quantity Availability
GT25Q102 TOSHIBA 632 In Stock

Description and Introduction

Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The GT25Q102 is a flash memory device manufactured by Toshiba. Here are its key specifications:

- **Memory Type**: NOR Flash
- **Density**: 1Mbit (128K x 8)
- **Interface**: Serial Peripheral Interface (SPI)
- **Operating Voltage**: 2.7V to 3.6V
- **Speed**: Up to 50MHz clock frequency
- **Sector Size**: 4KB (uniform sectors)
- **Page Size**: 256 bytes
- **Endurance**: 100,000 write/erase cycles per sector
- **Data Retention**: 20 years
- **Operating Temperature Range**: -40°C to +85°C
- **Package Options**: SOP8 (150mil), USON8 (2mm x 3mm)
- **Commands**: Supports standard SPI commands (Read, Write, Erase, etc.)
- **Security Features**: Software and hardware write protection
- **Deep Power-Down Mode**: Low standby current consumption

This information is based on the Toshiba datasheet for the GT25Q102.

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