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GLBCP56 from GTM

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GLBCP56

Manufacturer: GTM

NPN EPITAXIAL SILICON TRANSISTOR

Partnumber Manufacturer Quantity Availability
GLBCP56 GTM 220000 In Stock

Description and Introduction

NPN EPITAXIAL SILICON TRANSISTOR The part **GLBCP56** is manufactured by **GTM**. Here are the specifications from Ic-phoenix technical data files:  

- **Type**: Bipolar PNP Transistor  
- **Maximum Collector-Emitter Voltage (VCE)**: -80V  
- **Maximum Collector Current (IC)**: -3A  
- **Power Dissipation (Ptot)**: 40W  
- **DC Current Gain (hFE)**: 20-70  
- **Package**: TO-220  
- **Operating Temperature Range**: -65°C to +150°C  

These are the confirmed factual details for the **GLBCP56** transistor from **GTM**.

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