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FDG6318P from FAI,Fairchild Semiconductor

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FDG6318P

Manufacturer: FAI

Dual P-Channel, Digital FET

Partnumber Manufacturer Quantity Availability
FDG6318P FAI 4623 In Stock

Description and Introduction

Dual P-Channel, Digital FET The part FDG6318P is manufactured by Fairchild Semiconductor. It is a P-Channel Logic Level Enhancement Mode Field Effect Transistor (FET). Key specifications include:

- **Drain-Source Voltage (VDS)**: -30V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Continuous Drain Current (ID)**: -3.5A  
- **Power Dissipation (PD)**: 2.5W  
- **On-Resistance (RDS(on))**: 85mΩ at VGS = -10V, ID = -3.5A  
- **Threshold Voltage (VGS(th))**: -1V to -3V  

The part is designed for applications requiring high efficiency and low power loss, such as power management in portable devices.  

For FAI (First Article Inspection) specifications, refer to Fairchild Semiconductor's official documentation or contact them directly for detailed inspection criteria.

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