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FDG6301N from NS,National Semiconductor

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FDG6301N

Manufacturer: NS

Dual N-Channel, Digital FET

Partnumber Manufacturer Quantity Availability
FDG6301N NS 1334 In Stock

Description and Introduction

Dual N-Channel, Digital FET The part FDG6301N is manufactured by ON Semiconductor. It is a P-Channel Logic Level Enhancement Mode Field Effect Transistor (FET). Key specifications include:

- **Drain-Source Voltage (VDSS)**: -20V  
- **Gate-Source Voltage (VGSS)**: ±8V  
- **Continuous Drain Current (ID)**: -4.3A  
- **Power Dissipation (PD)**: 2.5W  
- **On-Resistance (RDS(on))**: 50mΩ at VGS = -4.5V  
- **Threshold Voltage (VGS(th))**: -1V (max)  
- **Package**: SOT-23  

This information is based on the manufacturer's datasheet.

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