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15.625ms

FDC653N

N-Channel Enhancement Mode Field Effect Transistor

Partnumber Manufacturer Quantity Availability
FDC653N 200 In Stock

Description and Introduction

N-Channel Enhancement Mode Field Effect Transistor The FDC653N is a P-Channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Drain-Source Voltage (VDS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.3A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 85mΩ (at VGS = -10V, ID = -4.3A)  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** TO-252 (DPAK)  

This information is based on the manufacturer's datasheet.

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