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FDC6320C from FAI,Fairchild Semiconductor

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FDC6320C

Manufacturer: FAI

Dual N & P Channel , Digital FET

Partnumber Manufacturer Quantity Availability
FDC6320C FAI 12000 In Stock

Description and Introduction

Dual N & P Channel , Digital FET The FDC6320C is manufactured by Fairchild Semiconductor (now part of ON Semiconductor).  

**Key FAI (First Article Inspection) Specifications:**  
- **Manufacturer:** Fairchild Semiconductor (ON Semiconductor)  
- **Type:** Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET)  
- **Package:** 6-Pin SOT-363 (SC-88)  
- **Voltage Rating (VDS):** 20V  
- **Current Rating (ID):** 1.3A (per channel)  
- **RDS(ON):** 0.25Ω (max at VGS = 4.5V)  
- **Gate Threshold Voltage (VGS(th)):** 0.4V to 1.4V  
- **Power Dissipation (PD):** 0.4W (per channel)  

For detailed FAI verification, refer to the datasheet and ON Semiconductor's quality assurance documentation.

Partnumber Manufacturer Quantity Availability
FDC6320C FAIRCHILD 2450 In Stock

Description and Introduction

Dual N & P Channel , Digital FET The FDC6320C is a P-Channel Logic Level MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Type**: P-Channel MOSFET  
- **Drain-Source Voltage (VDS)**: -20V  
- **Gate-Source Voltage (VGS)**: ±12V  
- **Continuous Drain Current (ID)**: -3.5A  
- **Pulsed Drain Current (IDM)**: -14A  
- **Power Dissipation (PD)**: 1.6W  
- **On-Resistance (RDS(on))**: 85mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th))**: -1V (max)  
- **Package**: SOT-23 (3-Lead)  

This MOSFET is designed for low-voltage, high-efficiency switching applications.

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