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FDC6310P from Fairchild,Fairchild Semiconductor

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FDC6310P

Manufacturer: Fairchild

Dual P-Channel 2.5V Specified PowerTrench MOSFET

Partnumber Manufacturer Quantity Availability
FDC6310P Fairchild 54000 In Stock

Description and Introduction

Dual P-Channel 2.5V Specified PowerTrench MOSFET The FDC6310P is a P-channel Logic Level Enhancement Mode Field Effect Transistor (FET) manufactured by Fairchild Semiconductor (now part of ON Semiconductor).  

### Key Specifications:  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.0A  
- **Power Dissipation (PD):** 1.6W  
- **On-Resistance (RDS(on)):** 85mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.7V to -1.5V  
- **Package:** SOT-23 (3-pin)  
- **Applications:** Load switching, power management in portable devices  

This information is based on Fairchild's datasheet for the FDC6310P.

Partnumber Manufacturer Quantity Availability
FDC6310P FAIRCHILD仙 2874 In Stock

Description and Introduction

Dual P-Channel 2.5V Specified PowerTrench MOSFET The FDC6310P is a P-Channel Logic Level MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications:

1. **Type**: P-Channel MOSFET  
2. **Drain-Source Voltage (VDSS)**: -20V  
3. **Gate-Source Voltage (VGSS)**: ±12V  
4. **Continuous Drain Current (ID)**: -3.1A  
5. **Pulsed Drain Current (IDM)**: -12A  
6. **Power Dissipation (PD)**: 1.6W  
7. **On-Resistance (RDS(on))**: 85mΩ at VGS = -4.5V  
8. **Gate Threshold Voltage (VGS(th))**: -0.4V to -1.5V  
9. **Package**: SOT-23 (3-Lead)  
10. **Operating Temperature Range**: -55°C to +150°C  

These specifications are based on Fairchild's datasheet for the FDC6310P.

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