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FDC6304P from NAS

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46.875ms

FDC6304P

Manufacturer: NAS

Digital FET, Dual P-Channel

Partnumber Manufacturer Quantity Availability
FDC6304P NAS 3000 In Stock

Description and Introduction

Digital FET, Dual P-Channel The FDC6304P is a P-channel MOSFET manufactured by ON Semiconductor. Here are the key specifications from the NAS (National Aerospace Standard) perspective:

1. **Voltage Rating**:  
   - Drain-to-Source Voltage (VDSS): -30V  

2. **Current Rating**:  
   - Continuous Drain Current (ID): -5.3A  
   - Pulsed Drain Current (IDM): -20A  

3. **Power Dissipation**:  
   - Maximum Power Dissipation (PD): 2.5W (at 25°C)  

4. **On-Resistance**:  
   - Drain-to-Source On-Resistance (RDS(on)): 85mΩ (at VGS = -10V, ID = -4.3A)  

5. **Gate Threshold Voltage**:  
   - Gate-to-Source Threshold Voltage (VGS(th)): -1V to -3V  

6. **Package**:  
   - SC-70 (SOT-323) Surface-Mount Package  

7. **Operating Temperature Range**:  
   - -55°C to +150°C  

These specifications are based on standard datasheet information and do not include NAS-specific testing or qualification data. For aerospace applications, additional verification may be required.

Partnumber Manufacturer Quantity Availability
FDC6304P FAIRCHILD 6000 In Stock

Description and Introduction

Digital FET, Dual P-Channel The FDC6304P is a P-Channel Logic Level MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:

- **Drain-Source Voltage (VDS)**: -30V  
- **Gate-Source Voltage (VGS)**: ±12V  
- **Continuous Drain Current (ID)**: -4.3A  
- **Pulsed Drain Current (IDM)**: -17A  
- **Power Dissipation (PD)**: 2.5W  
- **On-Resistance (RDS(on))**: 85mΩ at VGS = -10V, ID = -4.3A  
- **Threshold Voltage (VGS(th))**: -1V to -2V  
- **Total Gate Charge (Qg)**: 13nC  
- **Input Capacitance (Ciss)**: 500pF  
- **Output Capacitance (Coss)**: 150pF  
- **Reverse Transfer Capacitance (Crss)**: 70pF  
- **Operating Junction Temperature (TJ)**: -55°C to +150°C  
- **Package**: TO-252 (DPAK)  

This MOSFET is designed for low-voltage, high-speed switching applications.

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