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FDB8880 from FAIRCHILD,Fairchild Semiconductor

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15.625ms

FDB8880

Manufacturer: FAIRCHILD

30V N-Channel PowerTrench MOSFET

Partnumber Manufacturer Quantity Availability
FDB8880 FAIRCHILD 330 In Stock

Description and Introduction

30V N-Channel PowerTrench MOSFET **Introduction to the FDB8880 from Fairchild Semiconductor**  

The FDB8880 is a high-performance N-channel MOSFET designed by Fairchild Semiconductor to deliver efficient power management in a variety of electronic applications. This component features a low on-resistance (RDS(on)) and fast switching capabilities, making it well-suited for power conversion, motor control, and load switching circuits.  

Built with advanced trench technology, the FDB8880 ensures minimal conduction losses, enhancing energy efficiency in systems where power dissipation is a critical concern. Its robust design supports high current handling with a drain-source voltage (VDS) rating of 30V, making it ideal for low-voltage applications such as DC-DC converters and battery management.  

The MOSFET is housed in a compact, surface-mount package, facilitating easy integration into space-constrained PCB designs. Additionally, its low gate charge (Qg) contributes to reduced switching losses, further optimizing performance in high-frequency applications.  

Engineers and designers often select the FDB8880 for its reliability and thermal efficiency, ensuring stable operation under demanding conditions. Whether used in consumer electronics, industrial systems, or automotive applications, this MOSFET provides a dependable solution for modern power management challenges.

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