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FDB2670 from FSC,Fairchild Semiconductor

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7.813ms

FDB2670

Manufacturer: FSC

200V N-Channel PowerTrench MOSFET

Partnumber Manufacturer Quantity Availability
FDB2670 FSC 10 In Stock

Description and Introduction

200V N-Channel PowerTrench MOSFET The **FDB2670** from Fairchild Semiconductor is a high-performance N-channel MOSFET designed for efficient power management in a variety of applications. This component features a low on-resistance (RDS(on)) and fast switching capabilities, making it well-suited for power supply circuits, DC-DC converters, and motor control systems.  

With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of 55A, the FDB2670 delivers robust performance in demanding environments. Its advanced trench technology ensures reduced conduction losses, improving overall system efficiency. Additionally, the MOSFET is optimized for low gate charge (Qg), enabling faster switching speeds and minimizing power dissipation.  

The FDB2670 is housed in a TO-252 (DPAK) package, providing a compact footprint while maintaining excellent thermal performance. Its design supports high-reliability operation in industrial, automotive, and consumer electronics applications where energy efficiency and thermal management are critical.  

Engineers and designers will appreciate its balance of performance, durability, and cost-effectiveness, making it a practical choice for modern power electronics solutions. Whether used in voltage regulation or load switching, the FDB2670 offers dependable performance in a wide range of circuit designs.

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