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FDB14AN06LA0 from FAIRCHIL,Fairchild Semiconductor

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FDB14AN06LA0

Manufacturer: FAIRCHIL

N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package

Partnumber Manufacturer Quantity Availability
FDB14AN06LA0 FAIRCHIL 4800 In Stock

Description and Introduction

N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package **Introduction to the FDB14AN06LA0 Power MOSFET**  

The FDB14AN06LA0 is an N-channel power MOSFET developed by Fairchild Semiconductor, designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 14A, this component is well-suited for power management in industrial, automotive, and consumer electronics.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the FDB14AN06LA0 minimizes conduction losses, improving overall system efficiency. Its robust design ensures reliable performance in demanding environments, making it ideal for DC-DC converters, motor control circuits, and load switching applications.  

The MOSFET incorporates advanced trench technology, enhancing thermal performance and reducing power dissipation. Additionally, its compact TO-252 (DPAK) package offers a balance between thermal efficiency and board space optimization.  

Engineers selecting the FDB14AN06LA0 benefit from its high current-handling capability and low gate charge, which contribute to reduced switching losses. These attributes make it a versatile choice for applications requiring efficient power conversion and thermal management.  

For detailed specifications, refer to the manufacturer’s datasheet to ensure proper integration into circuit designs.

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