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FDB035AN06A0 from FAIRCHIL,Fairchild Semiconductor

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FDB035AN06A0

Manufacturer: FAIRCHIL

N-Channel PowerTrench ?MOSFET 60V, 80A, 3.5mOhm

Partnumber Manufacturer Quantity Availability
FDB035AN06A0 FAIRCHIL 4800 In Stock

Description and Introduction

N-Channel PowerTrench ?MOSFET 60V, 80A, 3.5mOhm The part **FDB035AN06A0** is manufactured by **FAIRCHILD**. Here are its specifications:  

- **Type**: Power MOSFET  
- **Technology**: N-Channel  
- **Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 35A  
- **Power Dissipation (PD)**: 38W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 35mΩ (max) at VGS = 10V  
- **Package**: TO-252 (DPAK)  

This information is based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
FDB035AN06A0 FAIRCHILD 129 In Stock

Description and Introduction

N-Channel PowerTrench ?MOSFET 60V, 80A, 3.5mOhm The **FDB035AN06A0** is a high-performance N-channel MOSFET developed by Fairchild Semiconductor, designed to meet the demands of power management applications. This component features a low on-resistance (RDS(on)) and high current handling capability, making it ideal for use in switching power supplies, motor control circuits, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 35A, the FDB035AN06A0 ensures efficient power delivery while minimizing conduction losses. Its advanced trench technology enhances switching performance, reducing energy dissipation in high-frequency applications.  

The MOSFET is housed in a TO-252 (DPAK) package, providing a compact footprint with excellent thermal characteristics. This makes it suitable for space-constrained designs where heat dissipation is a critical factor. Additionally, the device offers robust gate charge performance, ensuring fast switching transitions and improved system efficiency.  

Engineers and designers favor the FDB035AN06A0 for its reliability and performance in demanding environments. Its combination of low RDS(on), high current capability, and thermal efficiency makes it a preferred choice for modern power electronics applications. Whether used in industrial, automotive, or consumer electronics, this MOSFET delivers consistent and dependable operation.

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