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FDB031N08 from FAIRCHILD,Fairchild Semiconductor

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15.625ms

FDB031N08

Manufacturer: FAIRCHILD

N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m?

Partnumber Manufacturer Quantity Availability
FDB031N08 FAIRCHILD 3321 In Stock

Description and Introduction

N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m? The FDB031N08 is a PowerTrench MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:

- **Type**: N-Channel MOSFET  
- **Technology**: PowerTrench  
- **Drain-Source Voltage (VDSS)**: 80V  
- **Continuous Drain Current (ID)**: 100A (at 25°C)  
- **Pulsed Drain Current (IDM)**: 400A  
- **RDS(on) (Max)**: 3.1mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 300W (at 25°C)  
- **Operating Junction Temperature (TJ)**: -55°C to +175°C  
- **Package**: TO-263 (D2PAK)  

This MOSFET is designed for high-efficiency power switching applications.

Partnumber Manufacturer Quantity Availability
FDB031N08 FAIRCHIL 200 In Stock

Description and Introduction

N-Channel PowerTrench?MOSFET 75V, 235A, 3.1m? The FDB031N08 is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 80V  
- **Continuous Drain Current (ID)**: 30A  
- **Pulsed Drain Current (IDM)**: 120A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 3.1mΩ (at VGS = 10V)  
- **Package**: TO-263 (D2PAK)  
- **Technology**: TrenchFET®  
- **Applications**: Power switching in DC-DC converters, motor control, and other high-efficiency power systems.  

This information is based on Fairchild's datasheet for the FDB031N08.

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