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FQU20N06LTU from MITSUBISHI

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FQU20N06LTU

Manufacturer: MITSUBISHI

60V N-Channel Logic level QFET

Partnumber Manufacturer Quantity Availability
FQU20N06LTU MITSUBISHI 130 In Stock

Description and Introduction

60V N-Channel Logic level QFET The **FQU20N06LTU** is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. Known for its low on-resistance and fast switching capabilities, this component is widely used in power supplies, motor control circuits, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 20A, the FQU20N06LTU offers robust performance in demanding environments. Its low threshold voltage ensures compatibility with logic-level gate drive circuits, making it suitable for both low-voltage and high-power applications.  

The MOSFET features a compact TO-252 (DPAK) package, which enhances thermal dissipation while maintaining a small footprint on PCBs. Its advanced design minimizes conduction and switching losses, contributing to improved energy efficiency in power systems.  

Engineers and designers favor the FQU20N06LTU for its reliability, durability, and cost-effectiveness. Whether used in industrial automation, automotive electronics, or consumer devices, this component provides a dependable solution for efficient power switching.  

For detailed specifications, always refer to the manufacturer's datasheet to ensure proper integration within your circuit design.

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