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FQI4N80 from FAI,Fairchild Semiconductor

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15.625ms

FQI4N80

Manufacturer: FAI

800V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
FQI4N80 FAI 100 In Stock

Description and Introduction

800V N-Channel MOSFET The FQI4N80 is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the key FAI (First Article Inspection) specifications based on the datasheet:

1. **Voltage Rating (V_DSS)**: 800V  
2. **Current Rating (I_D)**: 4A (continuous)  
3. **On-Resistance (R_DS(on))**: 2.5Ω (max) at V_GS = 10V  
4. **Gate Threshold Voltage (V_GS(th))**: 3V to 5V  
5. **Power Dissipation (P_D)**: 38W (at 25°C)  
6. **Package**: TO-220F (fully insulated)  
7. **Operating Temperature Range**: -55°C to +150°C  
8. **Gate Charge (Q_g)**: 12nC (typical)  

These specifications are critical for verifying compliance during FAI. For exact tolerances and test conditions, refer to the official datasheet.

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