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FQH8N100C from FAI,Fairchild Semiconductor

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11.719ms

FQH8N100C

Manufacturer: FAI

N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?

Partnumber Manufacturer Quantity Availability
FQH8N100C FAI 72 In Stock

Description and Introduction

N-Channel QFET?MOSFET 1000V, 8.0A, 1.45? **Introduction to the FQH8N100C Power MOSFET**  

The **FQH8N100C** from Fairchild Semiconductor is a high-voltage N-channel MOSFET designed for power-switching applications. With a drain-source voltage (VDS) rating of **1000V** and a continuous drain current (ID) of **8A**, this component is well-suited for demanding power conversion tasks, including switch-mode power supplies (SMPS), inverters, and motor control circuits.  

Built using advanced MOSFET technology, the FQH8N100C offers low gate charge and reduced switching losses, enhancing efficiency in high-frequency applications. Its **fast recovery body diode** minimizes reverse recovery time, further improving performance in inductive load scenarios. The device features a **low on-resistance (RDS(on))** of 1.5Ω (typical), contributing to lower conduction losses and better thermal management.  

Encased in a **TO-3P package**, the FQH8N100C provides robust thermal dissipation, making it reliable in high-power environments. Its rugged design ensures durability under high-voltage stress, making it a preferred choice for industrial and automotive applications.  

Engineers seeking a high-voltage MOSFET with efficient switching characteristics and strong thermal performance will find the FQH8N100C a dependable solution for their power electronics designs.

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