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FQD6N50C from FAIRC,Fairchild Semiconductor

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FQD6N50C

Manufacturer: FAIRC

500V N-Channel Advance Q-FET C-Series

Partnumber Manufacturer Quantity Availability
FQD6N50C FAIRC 2500 In Stock

Description and Introduction

500V N-Channel Advance Q-FET C-Series The FQD6N50C is a MOSFET manufactured by FAIRC. Here are its key specifications:  

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 500V  
- **Continuous Drain Current (ID)**: 6A  
- **Pulsed Drain Current (IDM)**: 24A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 1.2Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 2V to 4V  
- **Input Capacitance (Ciss)**: 500pF (typ)  
- **Package**: TO-252 (DPAK)  

These specifications are based on FAIRC's datasheet for the FQD6N50C.

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