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FQD2N60TM from Fairchild,Fairchild Semiconductor

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FQD2N60TM

Manufacturer: Fairchild

600V N-Channel QFET

Partnumber Manufacturer Quantity Availability
FQD2N60TM Fairchild 2500 In Stock

Description and Introduction

600V N-Channel QFET The FQD2N60TM is a Power MOSFET manufactured by Fairchild Semiconductor. Below are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 600V
- **Continuous Drain Current (ID)**: 2A at 25°C
- **Pulsed Drain Current (IDM)**: 8A
- **Power Dissipation (PD)**: 38W at 25°C
- **Gate-Source Voltage (VGS)**: ±30V
- **On-Resistance (RDS(on))**: 4.5Ω (max) at VGS = 10V, ID = 1A
- **Threshold Voltage (VGS(th))**: 2V to 4V
- **Input Capacitance (Ciss)**: 300pF (typical)
- **Output Capacitance (Coss)**: 30pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 5pF (typical)
- **Turn-On Delay Time (td(on))**: 10ns (typical)
- **Turn-Off Delay Time (td(off))**: 50ns (typical)
- **Package**: TO-252 (DPAK)

This MOSFET is designed for high-voltage switching applications.

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