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FQD12N20LTM from FAIRCHIL,Fairchild Semiconductor

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FQD12N20LTM

Manufacturer: FAIRCHIL

200V N-Channel Logic Level QFET

Partnumber Manufacturer Quantity Availability
FQD12N20LTM FAIRCHIL 2500 In Stock

Description and Introduction

200V N-Channel Logic Level QFET The FQD12N20LTM is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:

- **Type**: N-Channel MOSFET  
- **Voltage Rating (V_DSS)**: 200V  
- **Current Rating (I_D)**: 12A (continuous)  
- **Power Dissipation (P_D)**: 125W  
- **Gate-Source Voltage (V_GS)**: ±20V  
- **On-Resistance (R_DS(on))**: 0.28Ω (max) at V_GS = 10V  
- **Gate Charge (Q_g)**: 30nC (typical)  
- **Package**: TO-252 (DPAK)  

This MOSFET is designed for high-speed switching applications, such as power supplies and motor control.  

(Source: Fairchild Semiconductor datasheet for FQD12N20LTM.)

Partnumber Manufacturer Quantity Availability
FQD12N20LTM FAIRCHILD 1810 In Stock

Description and Introduction

200V N-Channel Logic Level QFET The FQD12N20LTM is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Manufacturer:** Fairchild Semiconductor  
- **Part Number:** FQD12N20LTM  
- **Type:** N-Channel MOSFET  
- **Technology:** PowerTrench®  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 12A  
- **Pulsed Drain Current (IDM):** 48A  
- **Power Dissipation (PD):** 79W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.28Ω (max) at VGS = 10V  
- **Gate Charge (Qg):** 30nC (typical)  
- **Input Capacitance (Ciss):** 1050pF (typical)  
- **Output Capacitance (Coss):** 180pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 40pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 45ns (typical)  
- **Package:** TO-252 (DPAK)  

This MOSFET is designed for high-efficiency switching applications.

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