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FQD10N20 from Fairchild,Fairchild Semiconductor

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15.625ms

FQD10N20

Manufacturer: Fairchild

200V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
FQD10N20 Fairchild 3470 In Stock

Description and Introduction

200V N-Channel MOSFET The FQD10N20 is a power MOSFET manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 200V
- **Continuous Drain Current (ID)**: 10A
- **Pulsed Drain Current (IDM)**: 40A
- **Power Dissipation (PD)**: 75W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 0.28Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 2V to 4V
- **Input Capacitance (Ciss)**: 850pF (typical)
- **Output Capacitance (Coss)**: 180pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 50pF (typical)
- **Turn-On Delay Time (td(on))**: 10ns (typical)
- **Turn-Off Delay Time (td(off))**: 50ns (typical)
- **Package**: TO-252 (DPAK)

These specifications are based on Fairchild's datasheet for the FQD10N20.

Partnumber Manufacturer Quantity Availability
FQD10N20 FSC 759 In Stock

Description and Introduction

200V N-Channel MOSFET The part **FQD10N20** is manufactured by **Fairchild Semiconductor (FSC)**.  

Key specifications:  
- **Type**: N-Channel MOSFET  
- **Voltage Rating (VDSS)**: 200V  
- **Current Rating (ID)**: 10A  
- **Power Dissipation (PD)**: 50W  
- **RDS(on) (Max)**: 0.45Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Package**: TO-252 (DPAK)  

This information is based on Fairchild Semiconductor's datasheet for the FQD10N20.

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