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FQB6N80 from FAIRCHILD,Fairchild Semiconductor

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15.625ms

FQB6N80

Manufacturer: FAIRCHILD

800V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
FQB6N80 FAIRCHILD 1 In Stock

Description and Introduction

800V N-Channel MOSFET The FQB6N80 is a power MOSFET manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 800V
- **Continuous Drain Current (ID)**: 6A
- **Pulsed Drain Current (IDM)**: 24A
- **Power Dissipation (PD)**: 190W
- **Gate-Source Voltage (VGS)**: ±30V
- **On-Resistance (RDS(on))**: 1.2Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 3V (min), 5V (max)
- **Input Capacitance (Ciss)**: 1200pF (typ)
- **Output Capacitance (Coss)**: 100pF (typ)
- **Reverse Transfer Capacitance (Crss)**: 20pF (typ)
- **Turn-On Delay Time (td(on))**: 15ns (typ)
- **Turn-Off Delay Time (td(off))**: 60ns (typ)
- **Package**: TO-3P

This MOSFET is designed for high-voltage, high-speed switching applications.

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