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FQB6N60 from FAIRCHILD,Fairchild Semiconductor

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FQB6N60

Manufacturer: FAIRCHILD

600V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
FQB6N60 FAIRCHILD 355 In Stock

Description and Introduction

600V N-Channel MOSFET The FQB6N60 is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications:

- **Manufacturer**: Fairchild Semiconductor  
- **Part Number**: FQB6N60  
- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 600V  
- **Continuous Drain Current (ID)**: 6A  
- **Pulsed Drain Current (IDM)**: 24A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 1.2Ω (max) at VGS = 10V  
- **Gate Charge (Qg)**: 18nC (typical)  
- **Input Capacitance (Ciss)**: 800pF (typical)  
- **Output Capacitance (Coss)**: 110pF (typical)  
- **Reverse Transfer Capacitance (Crss)**: 30pF (typical)  
- **Turn-On Delay Time (td(on))**: 10ns (typical)  
- **Turn-Off Delay Time (td(off))**: 50ns (typical)  
- **Package**: TO-220F (Fully Insulated)  

This MOSFET is designed for high-voltage switching applications such as power supplies and motor control.

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