IC Phoenix logo

Home ›  F  › F18 > FQB30N06TM

FQB30N06TM from FAIRCHILD,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

FQB30N06TM

Manufacturer: FAIRCHILD

60V N-Channel QFET

Partnumber Manufacturer Quantity Availability
FQB30N06TM FAIRCHILD 80 In Stock

Description and Introduction

60V N-Channel QFET The FQB30N06TM is a power MOSFET manufactured by Fairchild Semiconductor. Below are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 60V
- **Continuous Drain Current (ID)**: 30A
- **Pulsed Drain Current (IDM)**: 120A
- **Power Dissipation (PD)**: 125W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 0.035Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 2V (min) to 4V (max)
- **Total Gate Charge (Qg)**: 60nC (typical)
- **Input Capacitance (Ciss)**: 2100pF (typical)
- **Output Capacitance (Coss)**: 600pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 120pF (typical)
- **Package**: TO-252 (DPAK)

These specifications are based on Fairchild's datasheet for the FQB30N06TM.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips