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FQB19N10TM from FAIRCHILD,Fairchild Semiconductor

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FQB19N10TM

Manufacturer: FAIRCHILD

100V N-Channel QFET

Partnumber Manufacturer Quantity Availability
FQB19N10TM FAIRCHILD 1038 In Stock

Description and Introduction

100V N-Channel QFET The FQB19N10TM is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 100V  
- **Continuous Drain Current (ID)**: 19A  
- **Pulsed Drain Current (IDM)**: 76A  
- **Power Dissipation (PD)**: 50W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.085Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 2V to 4V  
- **Total Gate Charge (Qg)**: 28nC (typical)  
- **Package**: TO-252 (DPAK)  

These specifications are based on Fairchild's datasheet for the FQB19N10TM.

Partnumber Manufacturer Quantity Availability
FQB19N10TM FAIRCHIL 6800 In Stock

Description and Introduction

100V N-Channel QFET The FQB19N10TM is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 100V  
- **Continuous Drain Current (ID)**: 19A  
- **Pulsed Drain Current (IDM)**: 76A  
- **Power Dissipation (PD)**: 50W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.085Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 2V to 4V  
- **Total Gate Charge (Qg)**: 30nC (typical)  
- **Package**: TO-220AB  

These specifications are based on Fairchild's datasheet for the FQB19N10TM.

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