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FP1A3M from NEC

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15.625ms

FP1A3M

Manufacturer: NEC

Hybrid transistor

Partnumber Manufacturer Quantity Availability
FP1A3M NEC 31705 In Stock

Description and Introduction

Hybrid transistor The part FP1A3M is manufactured by NEC. It is a P-channel MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor). Below are the key specifications:

1. **Type**: P-channel MOS FET  
2. **Drain-Source Voltage (VDSS)**: -30V  
3. **Gate-Source Voltage (VGSS)**: ±20V  
4. **Drain Current (ID)**: -3.5A  
5. **Power Dissipation (PD)**: 1W  
6. **On-Resistance (RDS(on))**: 0.15Ω (max) at VGS = -10V, ID = -3.5A  
7. **Threshold Voltage (VGS(th))**: -1.0V to -2.5V  
8. **Package**: TO-252 (DPAK)  

These specifications are based on NEC's datasheet for the FP1A3M.

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