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FN1L3M-T1B from NEC

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15.625ms

FN1L3M-T1B

Manufacturer: NEC

Compound transistor

Partnumber Manufacturer Quantity Availability
FN1L3M-T1B,FN1L3MT1B NEC 18000 In Stock

Description and Introduction

Compound transistor The part **FN1L3M-T1B** is manufactured by **NEC**.  

### Specifications:  
- **Type**: Schottky Barrier Diode  
- **Package**: SOD-323 (Miniature Surface Mount)  
- **Maximum Average Forward Current (IF(AV))**: 1A  
- **Peak Forward Surge Current (IFSM)**: 30A  
- **Reverse Voltage (VR)**: 30V  
- **Forward Voltage (VF)**: 0.38V (at 1A)  
- **Reverse Leakage Current (IR)**: 0.5mA (max at VR = 30V)  
- **Operating Temperature Range**: -55°C to +125°C  

This diode is designed for high-speed switching applications.  

(Source: NEC datasheet)

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