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FN1F4Z-T1B from NEC

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FN1F4Z-T1B

Manufacturer: NEC

Compound transistor

Partnumber Manufacturer Quantity Availability
FN1F4Z-T1B,FN1F4ZT1B NEC 3000 In Stock

Description and Introduction

Compound transistor The part **FN1F4Z-T1B** is manufactured by **NEC**.  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Package:** SOD-323  
- **Maximum Reverse Voltage (VR):** 40V  
- **Average Forward Current (IF):** 1A  
- **Peak Forward Surge Current (IFSM):** 30A  
- **Forward Voltage (VF):** 0.5V (typical at 1A)  
- **Reverse Leakage Current (IR):** 0.5mA (maximum at VR = 40V)  
- **Operating Temperature Range:** -55°C to +125°C  

This diode is commonly used in high-speed switching applications, rectification, and protection circuits.  

(Note: Always verify specifications with the latest datasheet from NEC or authorized distributors.)

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