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FN1F4N-T2B

Compound transistor

Partnumber Manufacturer Quantity Availability
FN1F4N-T2B,FN1F4NT2B 33000 In Stock

Description and Introduction

Compound transistor The part **FN1F4N-T2B** is a **Fast Recovery Diode** manufactured by **Diodes Incorporated**.  

### **Key Specifications:**  
- **Type:** Fast Recovery Diode  
- **Package:** SMB (DO-214AA)  
- **Maximum Repetitive Reverse Voltage (V_RRM):** 400V  
- **Average Forward Current (I_F(AV)):** 1A  
- **Peak Forward Surge Current (I_FSM):** 30A (non-repetitive)  
- **Forward Voltage Drop (V_F):** 1.3V (typical at 1A)  
- **Reverse Recovery Time (t_rr):** 50ns (typical)  
- **Operating Junction Temperature Range (T_J):** -55°C to +150°C  
- **Storage Temperature Range (T_STG):** -55°C to +150°C  

This diode is designed for high-efficiency rectification in switching power supplies, inverters, and other fast-switching applications.  

For exact datasheet details, refer to the manufacturer's documentation.

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