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FM16W08-SG from RAMTRON Pb-free

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FM16W08-SG

Manufacturer: RAMTRON Pb-free

64-Kbit (8 K ?8) Wide Voltage Bytewide F-RAM Memory

Partnumber Manufacturer Quantity Availability
FM16W08-SG,FM16W08SG RAMTRON Pb-free 103 In Stock

Description and Introduction

64-Kbit (8 K ?8) Wide Voltage Bytewide F-RAM Memory # Introduction to the FM16W08-SG  

The **FM16W08-SG** is a high-performance **non-volatile ferroelectric random-access memory (FRAM)** integrated circuit. Combining the speed of SRAM with the non-volatility of flash memory, this component offers fast read/write operations, high endurance, and low power consumption—making it ideal for applications requiring frequent data updates and reliable retention.  

With a **64Kb (8K × 8) memory density**, the FM16W08-SG operates on a **3.3V supply** and features a **standard parallel interface**, ensuring compatibility with legacy systems. Unlike traditional EEPROM or flash memory, FRAM technology provides **virtually unlimited write cycles (10^14 read/writes)**, eliminating wear-out concerns in data-intensive applications.  

Key features include **fast access times (70ns)**, **low standby current**, and **instant non-volatility**, ensuring data integrity even during power loss. The FM16W08-SG is well-suited for industrial automation, metering, medical devices, and automotive systems where reliability and endurance are critical.  

Available in a **28-pin SOP package**, this FRAM device maintains a small footprint while delivering robust performance. Its combination of speed, endurance, and non-volatility makes it a compelling alternative to conventional memory solutions in demanding embedded applications.

Partnumber Manufacturer Quantity Availability
FM16W08-SG,FM16W08SG RAMTRON 2000 In Stock

Description and Introduction

64-Kbit (8 K ?8) Wide Voltage Bytewide F-RAM Memory The part FM16W08-SG is a FRAM (Ferroelectric RAM) memory device manufactured by RAMTRON (now part of Cypress Semiconductor). Below are its key specifications:  

- **Memory Type**: Non-volatile FRAM (Ferroelectric Random Access Memory)  
- **Density**: 8 Kb (1024 × 8 bits)  
- **Interface**: Parallel (8-bit)  
- **Operating Voltage**: 3.3V  
- **Access Time**: 70 ns  
- **Endurance**: 10^14 read/write cycles  
- **Data Retention**: 10 years at 85°C  
- **Operating Temperature Range**: -40°C to +85°C  
- **Package**: 28-pin SOIC (Small Outline Integrated Circuit)  
- **Additional Features**:  
  - No write delays (similar to SRAM)  
  - Low power consumption  
  - Industrial-grade reliability  

This information is based solely on the manufacturer's datasheet for the FM16W08-SG.

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