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FJX2907ATF from FAIRCHILD

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FJX2907ATF

Manufacturer: FAIRCHILD

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
FJX2907ATF FAIRCHILD 3000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **FJX2907ATF** is manufactured by **FAIRCHILD**. Below are its specifications:  

- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Package**: SOT-23 (TO-236)  
- **Collector-Emitter Voltage (VCEO)**: -60V  
- **Collector-Base Voltage (VCBO)**: -60V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -600mA  
- **Power Dissipation (PD)**: 350mW  
- **DC Current Gain (hFE)**: 100–300 (at IC = -10mA, VCE = -5V)  
- **Transition Frequency (fT)**: 200MHz  
- **Operating Temperature Range**: -55°C to +150°C  

These are the factual specifications for the **FJX2907ATF** by **FAIRCHILD**.

Partnumber Manufacturer Quantity Availability
FJX2907ATF FAIRCHILD 1300 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **FJX2907ATF** is manufactured by **FAIRCHILD**. Below are its key specifications:  

- **Type**: PNP Bipolar Junction Transistor (BJT)  
- **Package**: SOT-23 (TO-236AB)  
- **Collector-Base Voltage (VCBO)**: -60V  
- **Collector-Emitter Voltage (VCEO)**: -40V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Continuous Collector Current (IC)**: -600mA  
- **Power Dissipation (PD)**: 350mW  
- **DC Current Gain (hFE)**: 100 (min) at IC = -10mA, VCE = -5V  
- **Transition Frequency (fT)**: 200MHz  
- **Operating Temperature Range**: -55°C to +150°C  

This transistor is commonly used in switching and amplification applications.  

(Source: Fairchild Semiconductor datasheet)

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