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FJX1182YTF from FAI,Fairchild Semiconductor

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7.813ms

FJX1182YTF

Manufacturer: FAI

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
FJX1182YTF FAI 15000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor **Introduction to the FJX1182YTF by Fairchild Semiconductor**  

The FJX1182YTF is a high-performance electronic component designed by Fairchild Semiconductor, known for its reliability and efficiency in power management applications. This N-channel MOSFET is optimized for low-voltage, high-speed switching, making it suitable for a variety of circuits, including DC-DC converters, motor control, and load switching.  

With a low on-resistance (RDS(on)) and fast switching characteristics, the FJX1182YTF minimizes power loss and enhances system efficiency. Its compact surface-mount package ensures ease of integration into modern PCB designs while maintaining robust thermal performance.  

Key features include a low gate charge and a high current-handling capability, which contribute to improved power density and reduced heat generation. These attributes make the FJX1182YTF a preferred choice for designers seeking a balance between performance and energy efficiency in space-constrained applications.  

Fairchild Semiconductor's commitment to quality ensures that the FJX1182YTF meets industry standards for durability and performance, making it a dependable solution for demanding electronic systems. Whether used in consumer electronics, industrial controls, or automotive applications, this MOSFET delivers consistent and reliable operation.

Partnumber Manufacturer Quantity Availability
FJX1182YTF FAIRCHILD 51000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **FJX1182YTF** is manufactured by **FAIRCHILD**. Below are its specifications based on Ic-phoenix technical data files:  

- **Manufacturer:** FAIRCHILD  
- **Part Number:** FJX1182YTF  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23  
- **Collector-Base Voltage (VCBO):** 30V  
- **Collector-Emitter Voltage (VCEO):** 30V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 225mW  
- **DC Current Gain (hFE):** 100-300 (typical)  
- **Transition Frequency (fT):** 300MHz  

This information is strictly factual from the provided knowledge base. Let me know if you need further details.

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