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FJV3109RMTF from FAIRCHILD,Fairchild Semiconductor

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FJV3109RMTF

Manufacturer: FAIRCHILD

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
FJV3109RMTF FAIRCHILD 3000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **Introduction to the FJV3109RMTF by Fairchild Semiconductor**  

The FJV3109RMTF is a high-performance PNP bipolar junction transistor (BJT) designed by Fairchild Semiconductor for efficient switching and amplification applications. This surface-mount device features a compact SOT-523 package, making it suitable for space-constrained designs in consumer electronics, industrial controls, and automotive systems.  

With a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) of -600mA, the FJV3109RMTF offers reliable operation in low-power circuits. Its high current gain (hFE) ensures stable performance across a wide range of operating conditions, while low saturation voltage enhances energy efficiency.  

The transistor is optimized for fast switching speeds, making it ideal for signal processing, load driving, and power management tasks. Its robust construction ensures durability in demanding environments, adhering to industry standards for quality and reliability.  

Engineers favor the FJV3109RMTF for its balance of performance, compact size, and cost-effectiveness, making it a versatile choice for modern electronic designs. Whether used in amplification or switching roles, this component delivers consistent results with minimal power dissipation.

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