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FJP13007H2TU

High Voltage Switch Mode Application

Partnumber Manufacturer Quantity Availability
FJP13007H2TU 562 In Stock

Description and Introduction

High Voltage Switch Mode Application The part **FJP13007H2TU** is a high-voltage NPN bipolar junction transistor (BJT) manufactured by **Fairchild Semiconductor** (now part of **ON Semiconductor**).  

### **Key Specifications:**  
- **Transistor Type:** NPN  
- **Maximum Collector-Emitter Voltage (VCEO):** 400V  
- **Maximum Collector Current (IC):** 8A  
- **Maximum Power Dissipation (PD):** 80W  
- **DC Current Gain (hFE):** 8–40 (at IC = 2.5A, VCE = 5V)  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.2V (max at IC = 4A, IB = 0.8A)  
- **Transition Frequency (fT):** 4MHz (typical)  
- **Package:** TO-220F (fully insulated)  

### **Applications:**  
- Switching power supplies  
- Electronic ballasts  
- Motor control circuits  
- High-voltage inverters  

This transistor is designed for high-voltage, high-speed switching applications.

Partnumber Manufacturer Quantity Availability
FJP13007H2TU FAIRCHILD 341 In Stock

Description and Introduction

High Voltage Switch Mode Application The part **FJP13007H2TU** is manufactured by **FAIRCHILD**. Below are its key specifications:  

- **Type**: NPN Bipolar Junction Transistor (BJT)  
- **Package**: TO-220F  
- **Collector-Emitter Voltage (VCE)**: 400V  
- **Collector Current (IC)**: 8A  
- **Power Dissipation (PD)**: 40W  
- **DC Current Gain (hFE)**: 8 to 40  
- **Transition Frequency (fT)**: 4MHz  
- **Operating Temperature Range**: -55°C to +150°C  

This transistor is commonly used in power switching applications.  

Let me know if you need further details.

Partnumber Manufacturer Quantity Availability
FJP13007H2TU N/A 562 In Stock

Description and Introduction

High Voltage Switch Mode Application The part FJP13007H2TU is a high-voltage NPN bipolar junction transistor (BJT). Below are its key specifications from Ic-phoenix technical data files:  

- **Manufacturer**: N/A (Not specified in Ic-phoenix technical data files)  
- **Type**: NPN Bipolar Transistor  
- **Voltage Ratings**:  
  - **Collector-Emitter Voltage (VCEO)**: 400V  
  - **Collector-Base Voltage (VCBO)**: 700V  
  - **Emitter-Base Voltage (VEBO)**: 9V  
- **Current Ratings**:  
  - **Collector Current (IC)**: 8A  
  - **Base Current (IB)**: 1.5A  
- **Power Dissipation (PD)**: 80W  
- **DC Current Gain (hFE)**: 8 to 40 (at IC = 4A, VCE = 5V)  
- **Switching Speed**:  
  - **Turn-On Time (ton)**: 500ns  
  - **Turn-Off Time (toff)**: 1000ns  
- **Package**: TO-220 (Through-hole)  

This information is based solely on the available data in Ic-phoenix technical data files. The manufacturer is not specified.

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