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FJN3313R from FAILCHIL,Fairchild Semiconductor

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FJN3313R

Manufacturer: FAILCHIL

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
FJN3313R FAILCHIL 1059 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **Introduction to the FJN3313R by Fairchild Semiconductor**  

The FJN3313R is a high-performance P-channel MOSFET designed by Fairchild Semiconductor, offering efficient power management in a compact package. This component is well-suited for applications requiring low on-resistance and fast switching speeds, making it ideal for power supplies, motor control, and load switching circuits.  

With a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) of -4.3A, the FJN3313R delivers reliable performance in demanding environments. Its low gate charge and threshold voltage enhance energy efficiency, reducing power losses in switching applications. The device is housed in a surface-mount SOT-23 package, ensuring space-saving integration into modern PCB designs.  

Engineers value the FJN3313R for its robustness, thermal stability, and compatibility with automated assembly processes. Whether used in portable electronics, automotive systems, or industrial controls, this MOSFET provides a dependable solution for power regulation and switching needs. Its combination of performance and compact form factor makes it a versatile choice for designers seeking efficiency without compromising reliability.  

Fairchild Semiconductor's legacy of quality ensures that the FJN3313R meets industry standards, delivering consistent performance across various operating conditions.

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