IC Phoenix logo

Home ›  F  › F11 > FDZ2554P

FDZ2554P from FAIRCHIL,Fairchild Semiconductor

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

FDZ2554P

Manufacturer: FAIRCHIL

Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET

Partnumber Manufacturer Quantity Availability
FDZ2554P FAIRCHIL 1700 In Stock

Description and Introduction

Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET **Introduction to the FDZ2554P by Fairchild Semiconductor**  

The **FDZ2554P** is a high-performance P-channel MOSFET designed by Fairchild Semiconductor (now part of ON Semiconductor) to deliver efficient power management in a compact package. This component is optimized for low-voltage applications, featuring a low on-resistance (RDS(on)) and fast switching capabilities, making it ideal for power-saving designs in portable electronics, battery management systems, and load switching circuits.  

With a drain-source voltage (VDS) rating of -20V and a continuous drain current (ID) of -3.8A, the FDZ2554P ensures reliable operation in demanding environments. Its advanced trench technology minimizes conduction losses, enhancing energy efficiency. The MOSFET also includes an integrated ESD protection diode, improving robustness against electrostatic discharge.  

Housed in a space-saving **Power33™ (SOT-223)** package, the FDZ2554P is well-suited for applications where board space is limited. Its thermal performance and low gate charge (QG) contribute to reduced power dissipation, making it a preferred choice for designers prioritizing both performance and thermal management.  

Engineers frequently utilize the FDZ2554P in DC-DC converters, power distribution modules, and other low-side switching applications, benefiting from its balance of efficiency, durability, and compact form factor.

Partnumber Manufacturer Quantity Availability
FDZ2554P FAIRCHILD 1692 In Stock

Description and Introduction

Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET The part FDZ2554P is manufactured by FAIRCHILD. It is a P-Channel Logic Level Enhancement Mode Field Effect Transistor (FET). Key specifications include:

- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** -3.7A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 60mΩ at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.4V to -1V  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

The transistor is designed for surface-mount applications and comes in a Power 56 package.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips