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ESM2012DV from ST,ST Microelectronics

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ESM2012DV

Manufacturer: ST

NPN DARLINGTON POWER MODULE

Partnumber Manufacturer Quantity Availability
ESM2012DV ST 52 In Stock

Description and Introduction

NPN DARLINGTON POWER MODULE The ESM2012DV is a dual N-channel MOSFET manufactured by STMicroelectronics (ST). Here are the key specifications from Ic-phoenix technical data files:

1. **Type**: Dual N-channel MOSFET  
2. **Package**: PowerSO-10  
3. **Drain-Source Voltage (VDS)**: 20V  
4. **Gate-Source Voltage (VGS)**: ±12V  
5. **Continuous Drain Current (ID)**: 6A per channel  
6. **Total Power Dissipation (Ptot)**: 2.5W  
7. **On-Resistance (RDS(on))**: 50mΩ (max) at VGS = 4.5V  
8. **Threshold Voltage (VGS(th))**: 1V (typical)  
9. **Applications**: Power management, DC-DC converters, motor control  

For further details, refer to the official ST datasheet.

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