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DF2S12S from TOSHIBA

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DF2S12S

Manufacturer: TOSHIBA

Product for Use Only as Protection against Electrostatic Discharge (ESD).

Partnumber Manufacturer Quantity Availability
DF2S12S TOSHIBA 16000 In Stock

Description and Introduction

Product for Use Only as Protection against Electrostatic Discharge (ESD). The part DF2S12S is manufactured by Toshiba. It is a Schottky barrier diode with the following specifications:

- **Type**: Schottky Barrier Diode  
- **Package**: TO-220AB  
- **Maximum Average Forward Current (IF(AV))**: 15A  
- **Peak Forward Surge Current (IFSM)**: 150A  
- **Maximum Reverse Voltage (VR)**: 120V  
- **Forward Voltage (VF)**: 0.85V (typical) at 7.5A  
- **Reverse Current (IR)**: 1mA (maximum) at 120V  
- **Operating Junction Temperature (Tj)**: -40°C to +150°C  

These are the key specifications for the DF2S12S diode as provided by Toshiba.

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