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DMN3200U-7 from DIODES

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DMN3200U-7

Manufacturer: DIODES

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
DMN3200U-7,DMN3200U7 DIODES 33000 In Stock

Description and Introduction

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR The DMN3200U-7 is a MOSFET manufactured by DIODES Incorporated. Below are its key specifications:

- **Type**: N-Channel MOSFET  
- **Voltage (VDS)**: 30V  
- **Current (ID)**: 60A (continuous)  
- **RDS(ON)**: 3.3mΩ (max) at VGS = 10V  
- **Gate Threshold Voltage (VGS(th))**: 1V (min), 2.5V (max)  
- **Power Dissipation (PD)**: 100W  
- **Package**: TO-252 (DPAK)  
- **Operating Temperature Range**: -55°C to +150°C  

This information is sourced from DIODES Incorporated's official documentation.

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