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DMN3024LSD-13 from DIODES

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DMN3024LSD-13

Manufacturer: DIODES

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Partnumber Manufacturer Quantity Availability
DMN3024LSD-13,DMN3024LSD13 DIODES 5000 In Stock

Description and Introduction

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET The DMN3024LSD-13 is a N-channel MOSFET manufactured by DIODES. Here are its key specifications:

- **Drain-Source Voltage (VDS)**: 30V  
- **Continuous Drain Current (ID)**: 5.7A  
- **RDS(on) (Max)**: 36mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 2.5W  
- **Operating Junction Temperature (TJ)**: -55°C to +150°C  
- **Package**: SOT-23  

These specifications are based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
DMN3024LSD-13,DMN3024LSD13 Diodes/Zetex 6340 In Stock

Description and Introduction

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET The DMN3024LSD-13 is a N-channel MOSFET manufactured by Diodes Incorporated (formerly Zetex). Here are its key specifications:

- **Drain-Source Voltage (VDS)**: 30V  
- **Continuous Drain Current (ID)**: 5.7A  
- **Pulsed Drain Current (IDM)**: 20A  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 2.1W  
- **On-Resistance (RDS(on))**: 13mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 1.0V (min) to 2.5V (max)  
- **Package**: PowerDI® 123  

This MOSFET is designed for applications requiring low on-resistance and high efficiency, such as power management and load switching.  

(Source: Diodes Incorporated datasheet for DMN3024LSD-13.)

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