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CY7C25702KV18-500BZXC from CY,Cypress

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15.625ms

CY7C25702KV18-500BZXC

Manufacturer: CY

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Partnumber Manufacturer Quantity Availability
CY7C25702KV18-500BZXC,CY7C25702KV18500BZXC CY 10 In Stock

Description and Introduction

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT The CY7C25702KV18-500BZXC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 36 Mb (1M x 36)  
- **Speed**: 500 MHz (2.0 ns clock cycle)  
- **Voltage Supply**: 1.8V (VDD) ±5%  
- **I/O Voltage**: 1.8V (VDDQ)  
- **Organization**: 1,048,576 words × 36 bits  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
- **Access Time**: 2.0 ns  
- **Burst Modes**: Linear or Interleaved  
- **Pipeline Stages**: Two-stage output pipeline  
- **Additional Features**:  
  - Single-cycle deselect  
  - On-chip address and control registers  
  - Byte write capability  
  - JTAG boundary scan (IEEE 1149.1 compliant)  

This device is designed for high-performance networking and computing applications requiring fast data access.

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