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CY7C2568KV18-400BZXC from CY,Cypress

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CY7C2568KV18-400BZXC

Manufacturer: CY

72-Mbit DDR-II SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C2568KV18-400BZXC,CY7C2568KV18400BZXC CY 1200 In Stock

Description and Introduction

72-Mbit DDR-II SRAM 2-Word Burst Architecture The CY7C2568KV18-400BZXC is a high-performance memory device manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:  

- **Type**: 72Mb QDR-II+ SRAM  
- **Density**: 72 Megabit (4M x 18)  
- **Speed**: 400 MHz (2.5 ns clock cycle)  
- **Voltage Supply**: 1.8V (VDD) ±5%  
- **I/O Voltage**: 1.5V (VDDQ) ±5%  
- **Interface**: QDR-II+ (Quad Data Rate)  
- **Organization**: 4M words × 18 bits  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package**: 165-ball BGA (Ball Grid Array)  
- **Data Rate**: 800 Mbps (double data rate on input/output)  
- **Features**: Separate read/write ports, burst-of-2 or burst-of-4 operation, echo clock outputs  

This device is optimized for high-bandwidth networking, telecommunications, and other performance-critical applications.  

(Source: Cypress/Infineon datasheet)

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