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CY7C2563KV18-450BZXI from CY,Cypress

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CY7C2563KV18-450BZXI

Manufacturer: CY

72-Mbit QDR-II SRAM 4-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C2563KV18-450BZXI,CY7C2563KV18450BZXI CY 130 In Stock

Description and Introduction

72-Mbit QDR-II SRAM 4-Word Burst Architecture The CY7C2563KV18-450BZXI is a high-performance SRAM device manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Type**: 72Mb QDR-II+ SRAM (Quad Data Rate II+)
- **Density**: 72 Megabit (4M x 18)
- **Speed**: 450 MHz (2.2 ns clock cycle)
- **Voltage Supply**: 1.8V ±5% (VDD) and 1.5V ±5% (VDDQ for I/O)
- **Interface**: QDR-II+ (separate read/write ports, burst-of-2/4)
- **Organization**: 4M words × 18 bits
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)
- **Data Bandwidth**: Up to 14.4 Gbps (450 MHz × 2 DDR × 18 bits)
- **Features**: 
  - Pipelined and flow-through operation
  - Echo clocks for data capture
  - JTAG boundary scan support
  - HSTL I/O compatible

This device is designed for high-speed networking, telecommunications, and other performance-critical applications.

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