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CY7C25632KV18-500BZXI from CY,Cypress

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CY7C25632KV18-500BZXI

Manufacturer: CY

72-Mbit QDR甀I+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Partnumber Manufacturer Quantity Availability
CY7C25632KV18-500BZXI,CY7C25632KV18500BZXI CY 15 In Stock

Description and Introduction

72-Mbit QDR甀I+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT The CY7C25632KV18-500BZXI is a 256Mb (32M x 8) synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 256Mb (32M words x 8 bits)  
- **Speed**: 500 MHz (2.0 ns clock-to-data access)  
- **Voltage Supply**: 1.8V ±5% (VDD)  
- **I/O Voltage**: 1.8V (HSTL compatible)  
- **Organization**: 32M x 8  
- **Interface**: Synchronous Pipelined  
- **Cycle Time**: 2.0 ns (500 MHz)  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package**: 165-ball FBGA (Fine-pitch Ball Grid Array)  
- **Features**:  
  - HSTL I/O  
  - On-chip address and data pipelining  
  - Burst and single-read/write operations  
  - JTAG boundary scan  

This SRAM is designed for high-performance networking, telecommunications, and computing applications.  

(Source: Cypress Semiconductor datasheet)

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