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CY7C25632KV18-400BZC from CY,Cypress

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CY7C25632KV18-400BZC

Manufacturer: CY

72-Mbit QDR甀I+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Partnumber Manufacturer Quantity Availability
CY7C25632KV18-400BZC,CY7C25632KV18400BZC CY 5 In Stock

Description and Introduction

72-Mbit QDR甀I+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT The CY7C25632KV18-400BZC is a high-performance synchronous SRAM manufactured by Cypress (now Infineon). Here are its key specifications:

- **Type**: Synchronous SRAM (QDR II+)
- **Density**: 72-Mbit (organized as 8M × 9 or 4M × 18)
- **Speed**: 400 MHz (2.5 ns clock cycle)
- **Voltage Supply**: 1.8V (core and I/O)
- **Interface**: QDR II+ (Quad Data Rate)
- **Data Rate**: 800 Mbps (double data rate on each clock edge)
- **Burst Length**: 2 or 4 (programmable)
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array)
- **Features**: Separate read/write ports, pipelined operation, and echo clocks for data capture.

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