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CY7C25442KV18-333BZI from CY,Cypress

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CY7C25442KV18-333BZI

Manufacturer: CY

72-Mbit QDR?II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT

Partnumber Manufacturer Quantity Availability
CY7C25442KV18-333BZI,CY7C25442KV18333BZI CY 17 In Stock

Description and Introduction

72-Mbit QDR?II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) with ODT The CY7C25442KV18-333BZI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 4Mb (256K x 18)  
- **Speed**: 333 MHz (3.0 ns clock-to-data access)  
- **Voltage Supply**: 1.8V ±5%  
- **I/O Voltage**: 1.8V (HSTL compatible)  
- **Organization**: 256K words × 18 bits  
- **Package**: 165-ball BGA (Ball Grid Array), 13mm × 15mm  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Features**:  
  - Pipelined operation for high-speed performance  
  - HSTL (High-Speed Transceiver Logic) interface  
  - Single-cycle deselect for reduced power consumption  
  - Byte write control  
  - JTAG boundary scan support  

This SRAM is commonly used in networking, telecommunications, and high-performance computing applications.

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